Theoretical Development of Exciton Energy in Semiconductor Microcavities of Thin Layers Generated in ZnSe and CdSe Materials

Abstract

The base state energy for the electron and hollow confined in a thin-walled quantum well and finite potential height in a semiconductor structure of ZnSe / CdSe / ZnSe is modeled by the development of the transcendental equation, from equations cool. The excitonic bond energy E_b and the photoluminescence energy FL as a function of the wellbore L are presented by the capacitance depositions of CdSe thin on the ZnSe in the z direction, using the variational method and effective mass approach, each Of the results obtained here showed a good approximation with those reported in experimental investigations.